IMPURITY CONDUCTION IN SILICON
Abstract
Impurity conduction at low temperature has been investigated using single crystal, p and n-type silicon samples of various impurity concentrations. Hall effect and resistivity were measured over the temperature range 4°K to 300°к. The results show that three ranges of impurity concentration may be distinguished: "pure", "high" and "intermediate", according to the ratio of separation, R, and Bohr radius, a, of the impurity atoms. For the "pure" range, R/a>6, the activation energy E3 for the resistivity was found to increase with increasing impurity concentration consistent with a model of Coulomb interaction between majority impurity and some compensating impurity.
Degree
Ph.D.
Subject Area
Physics
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