Two dimensional electron systems for solid state quantum computation

Sumit Mondal, Purdue University

Abstract

Two dimensional electron systems based on GaAs/AlGaAs heterostructures are extremely useful in various scientific investigations of recent times including the search for quantum computational schemes. Although significant strides have been made over the past few years to realize solid state qubits on GaAs/AlGaAs 2DEGs, there are numerous factors limiting the progress. We attempt to identify factors that have material and design-specific origin and develop ways to overcome them. The thesis is divided in two broad segments. In the first segment we describe the realization of a new field-effect induced two dimensional electron system on GaAs/AlGaAs heterostructure where the novel device-design is expected to suppress the level of charge noise present in the device. Modulation-doped GaAs/AlGaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect that is tunable over a density range of 6.5×10 10cm-2 to 2.6×1011cm-2 . Device design, fabrication, and low temperature (T=0.3K) characterization results are discussed. The demonstrated device-design overcomes several existing limitations in the fabrication of field-induced 2DEGs and might find utility in hosting nanostructures required for making spin qubits. The second broad segment describes our effort to correlate transport parameters measured at T=0.3K to the strength of the fractional quantum Hall state observed at ν=5/2 in the second Landau level of high-mobility GaAs/AlGaAs two dimensional electron systems. In an ultrapure two dimensional electron system (2DES) subjected to high magnetic field and very low temperatures, a large number of many-body ground states can emerge in a purely quantum phenomenon called the Fractional quantum Hall Effect (FQHE). The fractional state at ν=5/2 has drawn significant interest in recent times because of its predicted non-abelian excitations that can be utilized in constructing topologically protected quantum bits. In spite of having made significant advances in this direction, progress is hindered due to the fragility of this exotic state characterized by a small energy gap which puts very stringent requirements on the sample quality and the temperature scale. It is believed that the ν=5/2 activation gap is masked by disorders present in the sample which causes the experimentally observed gap to appear much smaller than the theoretically predicted intrinsic gap originating from purely electron-electron interactions in the clean-limit. Hence categorization of samples based on the strength of the ν=5/2 state hinges on the efficient quantification of disorder which is not a directly measurable quantity. Historically the zero-field transport mobility has been identified as the measure of disorder present in the sample. However careful comparison of data originating in our measurements with existing literature reveals that mobility is rather a weak indicator of the quality of FQHE in the 2nd Landau level and fails to reliably predict the ν=5/2 activation gap in a sample. In the absence of a single reliable indicator of sample quality in the 2nd Landau level, we propose a resistivity measured at ν=5/2 at T=0.3K as an alternative metric to characterize samples. Preliminary measurements involving a limited number of samples indicate that a resistivity measured at ν=5/2 might be better correlated with the ν=5/2 gap than mobility. Results also call for a more holistic approach in sample characterization by taking into consideration the heterostructure design while predicting sample quality. The possibility of quantum scattering time being an indicator of the strength of the ν=5/2 gap was investigated. The existing method of extracting quantum lifetime from the low-field Shubnikov-de Haas oscillations leads to unreliable extraction of quantum lifetime in high-mobility two dimensional electron samples potentially because an underlying assumption in the method that the amplitude of the density of states oscillations at low magnetic fields is negligible compared to the zero-field density of states might not hold true in case of high-mobility 2DES. A modified method was developed by relaxing the assumption which resulted in meaningful extraction of quantum lifetimes in all the high-mobility samples probed in the study. A correlation between the extracted quantum lifetime and the ν=5/2 activation gap was not discovered within the limited set of samples probed.

Degree

Ph.D.

Advisors

Manfra, Purdue University.

Subject Area

Condensed matter physics

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