Growth of III-Nitrides by molecular beam epitaxy
Abstract
Nitride compound materials are highly desirable for optoelectronic and power device applications due to their unique combinations of material properties. However due to the large lattice mismatches between AlN and GaN(2.5%), and between InN and GaN(11%), growth of nitride devices which contains lattice mismatched multiple quantum well (MQW) structures remains a challenge. In this work the growth of III-Nitride by the MBE method is investigated, covering the growth of AlGaN/GaN Resonant tunneling Diode, the growth of In0.18 Al0.82N that is lattice matched to GaN, and the fabrication of free standing GaN nanomembranes
Degree
Ph.D.
Advisors
Manfra, Purdue University.
Subject Area
Electrical engineering|Condensed matter physics|Materials science
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