Intersubband transitions in two-dimensional hole systems
Abstract
Charge carrier holes with degenerate valence band is one of the most important semiconductor systems. Recently, charge carrier holes in low dimensions were actively investigated in connection with development of information technology and possibility of spintronic devices. This work considers infrared transitions of charge carrier holes in GaAs like or Ge like quantum wells. While in recent years a simplified treatment of holes in low dimensions became quite common, such treatment can give misleading results. However, there exist an analytical approach to spectrum of holes in low dimensions, that can shed light on the possibility of potential applications of hole structures to various devices. Until our work this method has been mostly restricted to ground state of holes, which is a state with the heavy hole mass describing motion of holes along the growth axis aligned with the crystallographic direction [001]. Here we significantly expanded the power of this analytical method y considering the first excited state of holes with heavy effective mass along [001] direction, and the state of holes described by light effective mass along [001] direction with the lowest energy.
Degree
Ph.D.
Advisors
Lyanda-Geller, Purdue University.
Subject Area
Nanoscience|Quantum physics|Condensed matter physics
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