Side-gated graphene field-effect-transistors for novel electronic device applications
Abstract
Graphene has captured the imagination of researchers worldwide as a perfect two-dimensional material with exceptional electrical transport properties. The high electron and hole mobility quickly inspired scientists to search for electronic applications that require high performance channel materials. However, the absence of a bandgap in graphene immediately revealed itself in terms of ambipolar device characteristics and the non-existence of a device off-state – features not commonly shared with conventional semiconductors for electronic device applications in the past decades. The question is: How can we harvest the superior electronic properties of graphene while dealing appropriately with its unique characteristics rather than enforcing conventional device concepts? We have designed a novel electrostatic doping approach and fabricated an in-plane graphene double ribbon structure to experimentally demonstrate a number of graphene-based electronic applications, including the complementary-like graphene-based logic inverters/ analog voltage amplifiers, and the graphene-based analog frequency triplers. Moreover, based on the in-plane graphene double ribbon structure, we have performed Coulomb drag study between spatially separated charged particles, aiming to offer insight into the exciton condensate which forms a new type of Bose ground state.
Degree
Ph.D.
Advisors
Appenzeller, Purdue University.
Subject Area
Electrical engineering
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