Impact of nanostructure on polymer-based nonvolatile memory devices
Abstract
Memory functionality is essential for many high-end electronic applications (e.g., smart phones, personal computers). Particularly, organic nonvolatile memory devices based on polymer ferroelectric materials are a promising approach toward the development of low-cost memory due to the ease of processing and flexibility associated with the device. Here, we will focus on a memory device with a two-component active layer and a diode structure. This ferroelectric diode (FeD) has a nanostructured active layer, composed of ferroelectric and semiconducting polymers, and it can provide easy access to high-performance polymer-based memory devices. In order to create these nanostructured active layers, we have utilized a conventional lithographic technique, electron beam (e-beam) lithography. This lithographic technique allows for the simple fabrication of a desired pattern on the ferroelectric polymer layer. Specifically, to make a well-structured pattern, a ferroelectric polymer layer was etched with a mask. Then, a semiconducting polymer was deposited into the nanoporous ferroelectric layer to complete the ordered heterojunction. By optimizing the nanostructure, the performance of FeD is greatly enhanced over a traditional blended diode. This ability to control ferroelectric polymer morphology will open new fields of studying in the relationships between structure and performance in organic memory devices.
Degree
M.S.Ch.E.
Advisors
Boudouris, Purdue University.
Subject Area
Polymer chemistry|Chemical engineering
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