Multi-Scale Quantum Transport Modeling of Light Emitting Diodes
Abstract
GaN/InGaN multi-quantum-well (MQW) structure is the centerpiece of most mid to-high power light-emitting diodes (LED). The operation of MQW LEDs is determined by the carrier ?ow through complex, extended quantum states, the optical recombination between these states and the optical ?elds in the device. Most existing LED modeling tools are based on semiclassical physics with limited capabilities of modeling quantum phenomenon. Non-equilibrium Green Function Formalism (NEGF) is the state-of-the-art approach for quantum transport, however when it is applied in its textbook form it is numerically too demanding to handle realistically extended devices. This work introduces a new approach to LED modeling based on a multi-scaled NEGF approach that subdivides the critical device domains and separates the quantum transport from the recombination treatments. Several key modeling challenges and their solutions are addressed in this work. The model is applied to a commercial blue LED, and comparison between modeling and experimental results shows good promise.
Degree
Ph.D.
Advisors
Kubis, Purdue University.
Subject Area
Electrical engineering|Quantum physics|Nanotechnology
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