The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obtained are compared for two different deposition configurations with non‐uniformity as high as 40% predicted from the simulations.
Date of this Version
Venkattraman, A and Alexeenko, Alina A., "Molecular Models for DSMC Simulations of Metal Vapor Deposition" (2010). School of Aeronautics and Astronautics Faculty Publications. Paper 52.