Abstract
The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obtained are compared for two different deposition configurations with non‐uniformity as high as 40% predicted from the simulations.
Date of this Version
2010
DOI
10.1063/1.3562785
Recommended Citation
Venkattraman, A and Alexeenko, Alina A., "Molecular Models for DSMC Simulations of Metal Vapor Deposition" (2010). School of Aeronautics and Astronautics Faculty Publications. Paper 52.
http://dx.doi.org/10.1063/1.3562785
Comments
Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (A. Venkattraman* and A. Alexeenko, “Molecular Models for DSMC Simulations of Metal Vapors in Vacuum Deposition Systems”, AIP Conf. Proc., Vol. 1333, 27th International Symposium on Rarefied Gas Dynamics, pp. 1057-1062, 2011.) and may be found at http://dx.doi.org/10.1063/1.3562785. The following article has been submitted to/accepted by [American Institute of Physics]. After it is published, it will be found at (http://dx.doi.org/10.1063/1.3562785). Copyright (2011) A. Venkattraman* and A. Alexeenko. This article is distributed under a Creative Commons Attribution 3.0 Unported License.