Abstract

Three-dimensional direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam physical vapor deposition of copperthin films. Various molecular models for copper-copper interactions have been considered and a suitable molecular model has been determined based on comparisons of dimensional mass fluxes obtained from simulations and previous experiments. The variable hard sphere model that is determined for atomic copper vapor can be used in DSMC simulations for design and analysis of vacuum deposition systems, allowing for accurate prediction of growth rates, uniformity, and microstructure.

Comments

This is the published version of Venkattraman, A. and Alexeenko, A. “DSMC Modeling of E-Beam Metal Deposition”. First published in Journal Vacuum Science and Technology A and is available open access online at: http://dx.doi.org/10.1116/1.3386592.

Date of this Version

2010

DOI

10.1116/1.3386592

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