Electrical control of ferromagnetic state
Date of this Version10-2012
We report experiments where magnetization in GaMnAs ferromagnetic semiconductor is manipulated via strain or electric current. In both cases, charge carrier holes become partially polarized due to the anisotropic modification of holes spectra caused by spin-orbit interactions, and this polarization exerts spin torque sufficient to rotate ferromagnetic domains. (C) 2012 Elsevier B.V. All rights reserved.
Nanoscience and Nanotechnology