Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Gerhard Klimeck, Purdue University - Main Campus
Mathieu Luisier, Purdue University - Main Campus

Date of this Version

4-2010

Citation

G. Klimeck and M. Luisier, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN," in Computing in Science & Engineering, vol. 12, no. 2, pp. 28-35, March-April 2010. doi: 10.1109/MCSE.2010.32

Comments

G. Klimeck and M. Luisier, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN," in Computing in Science & Engineering, vol. 12, no. 2, pp. 28-35, March-April 2010.
doi: 10.1109/MCSE.2010.32

Abstract

Researchs have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 years to provide insight into nanoscale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices on an atomistic basis has been the key element in matching experimental data and guiding experiments. The resulting insights led to the creation of OMEN, a new simulation engine.

Discipline(s)

Nanoscience and Nanotechnology

 

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