Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics
Date of this Version5-25-2009
APPLIED PHYSICS LETTERS 94, 212104 (2009)
This document has been peer-reviewed.
GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same channel length of 0.75 mu m, the maximum drain current of 15 mA/mm on n-channel MOSFET is obtained on (111)A surface, in great contrast to only 1 mu A/mm on (100) surface. For p-channel MOSFETs, maximum drain currents of 0.17 mA/mm and 0.8 mA/mm are obtained on (111)A and (100) surfaces, respectively. An empirical model is proposed to correlate the experimental observation with the existing III-V MOS theories.
Nanoscience and Nanotechnology