On-State Characteristics of SiC Power UMOSFETs on 115- m Drift Layers

Author

• Y. SUI, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue UniversityFollow
• T. Tsuji, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University
• J. A. Cooper Jr., School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115- m-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm2 and specific on-resistance of 228m cm2 are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.

Keywords

High voltage, power transistors, silicon carbide, wide bandgap

Date of this Version

4-1-2005

Recommended Citation

SUI, Y.; Tsuji, T.; and Cooper, J. A. Jr., "On-State Characteristics of SiC Power UMOSFETs on 115- m Drift Layers" (2005). Birck and NCN Publications. Paper 258.
https://docs.lib.purdue.edu/nanopub/258