Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices

Sayeef Salahuddin, Purdue University - Main Campus
Supriyo Datta, Network for Computational Nanotechnology, Birck Nanotechnology Center, and Purdue University

Date of this Version

October 2006

Citation

DOI: 10.1063/1.2359292

This document has been peer-reviewed.

 

Abstract

This letter presents a self-consistent solution of quantum transport, using the nonequilibrium Green’s function method, and magnetization dynamics, using the Landau-Lifshitz-Gilbert formulation. This model is applied to study “spin-torque” induced magnetic switching in a device where the transport is ballistic and the free magnetic layer is sandwiched between two antiparallel AP ferromagnetic contacts. A hysteretic current-voltage characteristic is predicted at room temperature, with a sharp transition between the bistable states that can be used as a nonvolatile memory. It is further shown that this AP pentalayer device may allow significant reduction in the switching current, thus facilitating integration of nanomagnets with electronic devices.

 

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