Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
Date of this VersionApril 2007
This document has been peer-reviewed.
High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 mu m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10(-11) A at -2.5 V