Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed Gamma-L Valleys

Author

• Saumitra R. Mehrotra, Birck Nanotechnology Center, Purdue UniversityFollow
• Michael Povolotskyi, Birck Nanotechnology Center, Purdue UniversityFollow
• Doron Cohen Elias, University of California - Santa Barbara
• Tillmann Kubis, Birck Nanotechnology Center, Purdue UniversityFollow
• Jeremy J. M. Law, University of California - Santa Barbara
• Mark J. W. Rodwell, University of California - Santa Barbara
• Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

Transistor designs based on using mixed Gamma-L valleys for electron transport are proposed to overcome the density of states bottleneck while maintaining high injection velocities. Using a self-consistent top-of-the-barrier transport model, improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb, and Ge-on-insulator-based single-gate thin-body n-channel metal-oxide-semiconductor field-effect transistors. All the proposed designs successively begin to outperform strained-Si-on-insulator and InAs-on-insulator (InAs-OI) in terms of ON-state currents as the effective oxide thickness is reduced below 0.7 nm. InAs-OI still exhibits the lowest intrinsic delay (tau) due to its single Gamma valley.

Keywords

GaAs; GaSb; Ge; InAs; L-valley; Si; tight-binding (TB); ultrathin body (UTB); V COMPOUND SEMICONDUCTORS; III-V; PERFORMANCE

DOI

10.1109/LED.2013.2273072

Date of this Version

9-2013

Recommended Citation

Mehrotra, Saumitra R.; Povolotskyi, Michael; Elias, Doron Cohen; Kubis, Tillmann; Law, Jeremy J. M.; Rodwell, Mark J. W.; and Klimeck, Gerhard, "Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed Gamma-L Valleys" (2013). Birck and NCN Publications. Paper 1459.
http://dx.doi.org/10.1109/LED.2013.2273072