Abstract
CMOS devices are evolving from planar to 3D non-planar devices at nanometer scale to meet the ITRS [1] scaling requirements. These devices will operate under strong confinement and strain, regimes where atomistic effects are important. This work focuses on the quantum effects on the electrostatics of ultra-scaled silicon nanowire transistors. The method is based on the calculation of nanowire dispersion using an atomistic tight-binding (TB) model (sp3d5s* -SO) coupled self-consistently to a 2D Poisson equation solver. We enable the understanding of atomistic treatment in the charge distribution as well as the capacitance measurements in these ultra-scaled silicon nanowire transistors. This work will enhance the already available Bandstructure Lab tool on nanoHUB.org.
Date of this Version
September 2008
Comments
Proceedings of TECHCON 2008, Austin, TX