Vertical single-walled carbon nanotubes (vSWCNTs) are synthesized within highly ordered porous anodic alumina (PAA) templates supported on Si substrates. A process for obtaining thin-film PAA with long-range ordered nanopores is presented in this paper. Each nanopore contains at most one v-SWCNT that is supported by a dielectric and addressed by electrochemically formed Pd nanowire source contacts and evaporated Pd drain contacts. Characteristics of these completely vertical, two-terminal nanotube devices are presented. Control of the v-SWCNT length is demonstrated using a straightforward etching process with lengths of less than 100 nm achieved without the need for complex/expensive lithography. This effective nanoscale length control of highly ordered v-SWCNTs provides a practical basis for the realization of CNT-based nanoelectronics.
Field-Effect Transistors, High-Performance Electronics, Aligned Arrays, Fabrication, Templates, Contacts, FETS, Carbon nanotubes (CNTs), length scaling, nanotechnology, porous anodic alumina (PAA), vertical devices
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