Published in:
Ieee Transactions on Nuclear Science 51,3 (2004) 1150-1157;
Link to original published article:
http://dx.doi.org/10.1109/FNS.2004.829487
Abstract
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence(1) of I X 10(15) n(eq)/cm(2) at the CERN PS. Afterward, they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a nonzero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.
Keywords
charge collection;; cms;; lhc;; pixel sensor;; pixels;; p-spray;; p-stop;; radiation hardness;; irradiated silicon detectors
Date of this Version
January 2004