Published in:

Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment 565,1 (2006) 212-220;


We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5 x 1014 to 5.9 x 10(14) n(eq)/cm(2). The model correctly predicts the variation in the profiles as the temperature is changed from -10 to -25 degrees C. The measured charge collection profiles are inconsistent with the linearly varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. (c) 2006 Elsevier B.V. All rights reserved.


pixels;; radiation effects;; space charge;; simulation;; electric fields;; detectors

Date of this Version

January 2006



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