Extraction of electric field in heavily irradiated silicon pixel sensors
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment 560,1 (2006) 112-117;
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 10(15) n(eq)/cm(2) sensors. (c) 2005 Elsevier B.V. All rights reserved.
electric field;; radiation hardness;; lorentz angle;; charge collection;; silicon;; pixel;; cms;; mobilities;; charge
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