Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3

Runsheng Wang, Birck Nanotechnology Center, Purdue University; Peking University
Min Xu, Birck Nanotechnology Center, Purdue University
Peide D. Ye, Birck Nanotechnology Center, Purdue University
Ru Huang, Peking University

Date of this Version



Journal of Vacuum Science & Technology B: Volume 29, Issue 4. DOI: 10.1116/1.3610972


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology B: Volume 29, Issue 4. and may be found at The following article has been submitted to/accepted by Journal of Vacuum Science & Tech. B. Copyright (2011) Runsheng Wang, Min Xu, and Peide D. Ye Ru Huang. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height (SBH) at the metal/semiconductor interface. Both n-type and p-type In0.53Ga0.47As are investigated by inserting an atomic-layer deposited Al2O3 interlayer. The results indicate that SBH modulation is more effective at the n-InGaAs interface than the p-InGaAs interface for the same Al2O3 thickness. However, the Fermi level at the metal/InGaAs interface is still weakly pinned even after inserting 2 nm Al2O3. The mechanism of the SBH modulation could be attributed to the creation of an electric dipole at the Al2O3/InGaAs interface, which induces a barrier shift. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610972]


Nanoscience and Nanotechnology