Amorphous interface layer in thin graphite films grown on the carbon face of SiC

R. Colby, Birck Nanotechnology Center, Purdue University
M. L. Bolen, Birck Nanotechnology Center, Purdue University
Michael A. Capano, Birck Nanotechnology Center, Purdue University
E. A. Stach, Birck Nanotechnology Center, Purdue University; Brookhaven National Laboratory

Date of this Version



Applied Physics Letters: Volume 99, Issue 10


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 99, Issue 10 and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) R. Colby, M. L. Bolen, M. A. Capano, and E. A. Stach. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Scanning transmission electron microscopy (STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600 degrees C for a range of growth pressures in argon, but not at 1500 degrees C, suggesting a temperature-dependent formation mechanism. (C) 2011 American Institute of Physics. [doi:10.1063/1.3635786]


Nanoscience and Nanotechnology