Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Tian Shen, Purdue University; National Institute of Standards & Technology
Wei Wu, University of Houston
Qingkai Yu, Unversity of Houston
Curt A. Richter, National Institute of Standards & Technology
Randolph Elmquist, National Institute of Standards & Technology
David Newell, National Institute of Standards & Technology
Yong P. Chen, Birck Nanotechnology Center, Purdue University

Date of this Version



Applied Physics Letters: Volume 99, Issue 23


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 99, Issue 23 and may be found at http://dx.doi.org/10.1063/1.3663972. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Tian Shen, Wei Wu, Qingkai Yu, Curt A. Richter, Randolph Elmquist, David Newell, and Yong P. Chen. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm x 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier mobilities approximate to 4000 cm(2)/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3663972]


Nanoscience and Nanotechnology