Indirectly Pumped 3.7 THz InGaAs/InAlAs Quantum-Cascade Lasers Grown by Metal-Organic Vapor-Phase Epitaxy

Kazuue Fujita, Hamamatsu Photonics
Masamichi Yamanishi, Hamamatsu Photonics
Shinichi Furuta, Hamamatsu Photonics
Kazunori Tanaka, Hamamatsu Photonics
Tadataka Edamura, Hamamatsu Photonics
Tillmann Kubis, Network for Computational Nanotechnology, Purdue University
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University

Date of this Version



Optics Express Vol. 20, No. 18, 20647-20658. 27 August 2012


Optics Express 2012, Vol. 20, No. 18, 20647


Device-performances of 3.7 THz indirect-pumping quantum- cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum operating temperature of Tmax~100 K. The observed roll-over of output intensities in current ranges below maximum currents and limitation of Tmax are discussed with a model for electron-gas heating in injectors. Possible ways toward elevation of Tmax are suggested.


Nanoscience and Nanotechnology