Enhancement of Thermoelectric Efficiency by Uniaxial Tensile Stress in n-type GaAs Nanowires
Date of this Version8-15-2011
2011 11th IEEE International Conference on Nanotechnology Portland Marriott August 15-18, 2011, Portland, Oregon
The thermoelectric power-factor (PF) and efficiency (ZT) of GaAs nanowires (NWs) can be improved by (i) choosing a proper wire growth and channel orientation, (ii) by applying uniaxial tensile stress, and (iii) suitable wire cross-section size. In this work we study the impact of these three factors on the PF and the ZT. Tensile stress, channel direction and cross-section size allows bandstructure engineering to tune the electronic conductance (G) and the Seebeck coefficient (S).  GaAs NWs grown on (111) surface provide maximum PF (3X) and ZT (1.3X) compared to /(100) NWs, which can be attributed to the G enhancement induced by the L valley contribution under strain.
Engineering | Nanoscience and Nanotechnology