Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Woo-Suhl Cho, Purdue University - Main Campus
Mathieu Luisier, Purdue University - Main Campus
Dheeraj Mohata, The Pennsylvania State University
Suman Datta, The Pennsylvania State University
David Pawlik, Rochester Institute of Technology
Sean L. Rommel, Rochester Institute of Technology
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



Applied Physics Letters: Volume 100, Issue 6


Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 100, 063504 (2012) and may be found at http://dx.doi.org/10.1063/1.3682506. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik, Sean L. Rommel, and Gerhard Klimeck. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. An empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall the presented model reproduces experimental data well.


Nanoscience and Nanotechnology