Effect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces

Dhruv Singh, Purdue University
Jayathi Murthy, Purdue University
Tim Fisher, Purdue University

Date of this Version



Proceedings of the ASME InterPack Conference 2009, IPACK2009. (Vol. 1, pp. 575-591)


We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons. [DOI: 10.1115/1.4004429]


Nanoscience and Nanotechnology