Atomistic Modeling of the Thermoelectric Power Factor in Ultra-Scaled Silicon Nanowires

Abhijeet Paul, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



2010 Silicon Nanoelectronics Workshop (SNW): Atomistic modeling of the thermoelectric power factor in ultra-scaled Silicon nanowires View Document


Proceedings of the 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010


Dimensional scaling provides an alternative route to improve the thermoelectric figure of merit (ZT) by the reduction of the lattice thermal conductivity(␣l). However, this method is reaching the scaling limit. Further improvement in ZT can be achieved by improving the thermoelectric power-factor (S2G), the numerator of ZT. In this work we study this part of ZT using a combination of semi-empirical Tight-Binding method and Landauer approach. We study the effect of cross-sectional confinement, wire orientation and uniaxial strain on the power-factor (PF). It is found that any improvement in PF is only achieved for wires with cross-section size less than 6nm x 6nm.


Nanoscience and Nanotechnology