Scattering in Si-Nanowires - Where Does it Matter?

Gerhard Klimeck, Purdue University - Main Campus
Mathieu Luisier, Purdue University - Main Campus

Date of this Version



2010 Silicon Nanoelectronics Workshop (SNW)


Proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010


Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Green function formalism (NEGF) in our new OMEN simulator. Energy loss due to phonon emission is shown to lead to a resistive potential drop in the emitter of the nanowire. Phonon absorption is shown to increase the current in a band-to-band-tunneling configuration.


Nanoscience and Nanotechnology