Study of Ultra-Scaled SiGe/Si Core/Shell Nanowire FETs for CMOS Applications
Date of this Version2009
2009 International Semiconductor Device Research Symposium: Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications
SiGe/Si core/shell nanowire (NW) devices are promising candidates for the future generation MOSFETs providing better channel control and hole mobility [1-4]. These core-shell devices can be exploited both as p- and n-type devices . The Si shell improves the semiconductor-oxide interface and enhances the device performances [1, 3]. The Germanium condensation technique  is able to provide high Ge content (>50%) channel with Si as capping layer. In this work we investigate the viability of using these core/shell NWFETs for CMOS application.