Strain Effects on the Phonon Thermal Properties of Ultra-Scaled Si Nanowires

Abhijeet Paul, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



Applied Phys. Letters 99, 083115 (2011)


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 99, Issue 8 and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Abhijeet Paul and Gerhard Klimeck. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


The impact of uniaxial and hydrostatic stress on the ballistic thermal conductance (jl) and the specific heat (Cv) of [100] and [110] Si nanowires are explored using a Modified Valence Force Field phonon model. An anisotropic behavior of jl and isotropic nature of Cv under strain are predicted for the two wire orientations. Compressive (tensile) strain decreases (increases) Cv. The Cv trend with strain is controlled by the high energy phonon sub-bands. Dominant contribution of the low/mid (low/high) energy bands in [100] ([110]) wire and their variation under strain governs thebehaviorofjl.VC 2011AmericanInstituteofPhysics.


Nanoscience and Nanotechnology