Atomistic Study of Electronic Structure of PbSe Nanowires
Date of this Version3-9-2011
Applied Physics Letters: Volume 98, Issue 21
Lead Selenide (PbSe) is an attractive ‘IV-VI’ semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the bandstructure of PbSe NWs is studied using an 18 band sp3d5 tight-binding theory. The bandgap increases almost with the inverse of the W for all the orientations indicating a weak symmetry dependence.  and  NWs show higher ballistic conductance for the conduction and valence band compared to  NWs due to the significant splitting of the projected L-valleys in  NWs.
Nanoscience and Nanotechnology