Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors

SungGeun Kim, Purdue University - Main Campus
Mathieu Luisier, Integrated Systems Laboratory, Zurich, Switzerland
Timothy B. Boykin, University of Alabama - Huntsville
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



Applied Physics Letters: Volume 99, Issue 23


Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 99, Issue 23 and may be found at http://dx.doi.org/10.1063/1.3665939. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Sung Geun Kim, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full–band quantum transport simulation based on the sp3d5s∗ tight–binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction.


Nanoscience and Nanotechnology