On the Importance of Band Gap Formation in Graphene for Analog Device Application
Date of this Version1-18-2011
IEEE Transactions on Nanotechnology ( Volume: 10, Issue: 5, Sept. 2011 )
We have studied and identified the ideal bandgap value in graphene devices, e.g. through size quantization in graphene nano-ribbons, to enable graphene based high performance RF applications. When considering a ballistic graphene nano-ribbon low noise amplifier (GNR-LNA), including aspects like stability, gain, power dissipation and load impedance, our calculations predict a finite bandgap of the order of Eg≈100meV to be ideally suited. GNR-LNAs with this bandgap, biased at the optimum operating point are ultra-fast (THz) low noise amplifiers exhibiting performance specs that show considerable advantages over state-of-the-art technologies. The optimum operating point and bandgap range is found by simulating the impact of the bandgap on several device and circuit relevant parameters including transconductance, output resistance, band-width, gain, noise figure and temperature fluctuations.
Electrical and Electronics | Electronic Devices and Semiconductor Manufacturing | Nanoscience and Nanotechnology | VLSI and Circuits, Embedded and Hardware Systems