On the Importance of Band Gap Formation in Graphene for Analog Device Application

Saptarshi Das, Doctoral Student
Joerg Appenzeller, Birck Nanotechnology Center, Purdue University

Date of this Version



IEEE Transactions on Nanotechnology ( Volume: 10, Issue: 5, Sept. 2011 )


We have studied and identified the ideal bandgap value in graphene devices, e.g. through size quantization in graphene nano-ribbons, to enable graphene based high performance RF applications. When considering a ballistic graphene nano-ribbon low noise amplifier (GNR-LNA), including aspects like stability, gain, power dissipation and load impedance, our calculations predict a finite bandgap of the order of Eg≈100meV to be ideally suited. GNR-LNAs with this bandgap, biased at the optimum operating point are ultra-fast (THz) low noise amplifiers exhibiting performance specs that show considerable advantages over state-of-the-art technologies. The optimum operating point and bandgap range is found by simulating the impact of the bandgap on several device and circuit relevant parameters including transconductance, output resistance, band-width, gain, noise figure and temperature fluctuations.


Electrical and Electronics | Electronic Devices and Semiconductor Manufacturing | Nanoscience and Nanotechnology | VLSI and Circuits, Embedded and Hardware Systems