Effect of Strain on Stripe Phases in the Quantum Hall Regime

Sunanda P. Koduvayur, Purdue University
Yuli Lyanda-Geller, Purdue University
Sergei Khlebnikov, Purdue University
Gabor Csathy, Purdue
Michael J. Manfra, Purdue University
Loren N. Pfeiffer, Princeton University
Kenneth W. West, Princeton University
Leonid P. Rokhinson, Birck Nanotechnology Center, Purdue University

Date of this Version



DOI: 10.1103/PhysRevLett.106.016804


Preferential orientation of the stripe phases in the quantum Hall (QH) regime has remained a puzzle since its discovery. We show experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the QH regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along the [110] or [1 (1) over bar0] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.


Nanoscience and Nanotechnology