Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser

Seongmin Kim, Purdue University
Sunkook Kim, Purdue University
Pornsak Srisungsitthisunti, Purdue University
Chunghun Lee, Purdue University
Min Xu, Purdue University
Peide D. Ye, Purdue University
Minghao Qi, Purdue University
Xianfan Xu, Purdue University
Chongwu Zhou, University of Southern California
Sanghyun Ju, Kyonggi University
David B. Janes, Purdue University

Date of this Version



J. Phys. Chem. C, 2011, 115 (34), pp 17147–17153


Nanowire materials have gained great interest as promising candidates for high-performance logic devices to sustain the progress in device scaling. However, little research has been conducted to investigate the role of contacts on the device performance accompanied by an appropriate physical model in nanodevices, although effects of the contacts will prevail as the channel scales. In this study, we investigate the effect of annealing using a femtosecond-laser focused at the contact region between the source-drain electrodes and the nanowire. On the basis of the direct comparison of device characteristics before and after annealing, a contact model is introduced, which could be generally applicable to nanowire transistors with overlap between gate region and source-drain regions. Low-frequency noise measurements in the devices reveal that the Id2 normalized noise spectrum and Hooge’s constant are reduced following laser annealing.


Nanoscience and Nanotechnology