Atomistic Approach to Alloy Scattering in Si(1-x)Ge(x)
Date of this Version
4-26-2011Citation
Applied Physics Letters 98, 173503 (2011)
Abstract
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into complementary metal-oxide semiconductor technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in SiGe. This approach puts the scattering model on a solid atomistic footing with physical insights. The approach is shown to inherently capture the bulk alloy scattering potential parameters for both n-type and p-type
carriers and matches experimental mobility data.
Discipline(s)
Nanoscience and Nanotechnology
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Comments
Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 173503 (2011) and may be found at http://dx.doi.org/10.1063/1.3583983. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Saumitra R. Mehrotra, Abhijeet Paul, and Gerhard Klimeck. This article is distributed under a Creative Commons Attribution 4.0 Unported License.