Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)

Sara E. Harrison, Purdue University - Main Campus
Michael A. Capano, Birck Nanotechnology Center, Purdue University
R. Reifenberger, Birck Nanotechnology Center, Purdue University

Date of this Version



Appl. Phys. Lett. 96, 081905 (2010)

This document has been peer-reviewed.



Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 081905 (2010) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2010) S. E. Harrison, M. A. Capano, and R. Reifenberger. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene, the striated structure along the ridges argues for a localized unidirectional stress in the material directed along the ridge length.


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