Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

Helin Cao, Purdue University - Main Campus
Qingkai Yu, University of Houston - Main
Luis A. Jauregui, Purdue University - Main Campus
J Tian, Purdue University - Main Campus
W Wu, University of Houston - Main
Z Liu, University of Houston - Main
Ramaneh Jalilian, Purdue University - Main Campus
D K. Benjamin, Georgia Institute of Technology - Main Campus
Z Jiang, Georgia Institute of Technology - Main Campus
J Bao, University of Houston - Main
S S. Pei, University of Houston - Main
Yong P. Chen, Purdue University - Main Campus

Date of this Version



DOI: 10.1063/1.3371684

This document has been peer-reviewed.



We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio similar to 5 and carrier mobilities up to similar to 3000 cm(2)/V s) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.


Engineering | Nanoscience and Nanotechnology