III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

Isaac Wildeson, Purdue Univ, Sch Elect & Comp Engn
Robert Colby, Purdue University - Main Campus
David Ewoldt, Birck Nanotechnology Center, Purdue University
Zhiwen Liang, Purdue University - Main Campus
Dmitri Zakharov, Birck Nanotechnology Center, Purdue University
Nestor J. Zaluzec, Argonne Natl Lab
R. Edwin García, Purdue University - Main Campus
E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
Timothy D. Sands, Purdue University

Date of this Version



Journal of Applied Physics 108, 044303 (2010)

This document has been peer-reviewed.



Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 108, 044303 (2010) and may be found at http://dx.doi.org/10.1063/1.3466998 The following article has been submitted to/accepted by Journal of Applied Physics. Copyright (2010) Isaac H. Wildeson, Robert Colby, David A. Ewoldt, Zhiwen Liang, Dmitri N. Zakharov, Nestor J. Zaluzec, R. Edwin García, Eric A. Stach, and Timothy D. Sands. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth e templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {1 (1) over bar 01} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to similar to 20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the (In,Ga)N quantum wells and GaN cladding layers grown at 650-780 degrees C, present in 38% of the nanopyramid heterostructures. Plan-view TEM of the planar defects confirms that these defects do not terminate within the nanopyramids. During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.


Engineering | Nanoscience and Nanotechnology