Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry

Sunkook Kim, Purdue University - Main Campus
Seongmin Kim, Purdue University - Main Campus
Jongsun Park, Korea University - Korea
Sanghyun Ju, Kyonggi University
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University

Date of this Version



ACS Nano, 2010, 4 (6), pp 2994–2998

This document has been peer-reviewed.



Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I-on) in the microampere range, high on/off current ratio (I-on/I-off), high field-effect mobility, and uniform threshold voltage (V-th). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I-on/I-off higher than 10(3), and a high yield with reproducible electrical characteristics.


Engineering | Nanoscience and Nanotechnology