Band offsets of Al2O3/InxGa1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

N V. Nguyen, Natl Inst Stand & Technol, Div Semicond Elect
M Xu, Purdue University - Main Campus
O A. Kirillov, Natl Inst Stand & Technol, Div Semicond Elect
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
C Wang, Purdue University - Main Campus
K Cheung, Natl Inst Stand & Technol, Div Semicond Elect
J S. Suehle, Natl Inst Stand & Technol, Div Semicond Elect

Date of this Version



Appl. Phys. Lett. 96, 052107 (2010)

This document has been peer-reviewed.



Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 052107 (2010) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2010) N. V. Nguyen, M. Xu, O. A. Kirillov, P. D. Ye, C. Wang, K. Cheung, and J. S. Suehle. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Band offsets at the interfaces of InxGa1-xAs/Al2O3/Al where x=0.53 and 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs/Al2O3 interface was found to be insensitive to the indium composition but shifted to a lower energy after a postdeposition annealing at high temperatures. Subthreshold electron photoemission was also observed for the annealed sample and was attributed to interfacial layer formation during the annealing process.


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