An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming

Laleh Rabieirad, Purdue University - Main Campus
Edgar J. Martinez, University of Illinois at Urbana-Champaign
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University

Date of this Version



IEEE Transactions on Advanced Packaging (Volume: 33, Issue: 2, May 2010)

This document has been peer-reviewed.



A configurable integration technology suitable for implementing application specific radio-frequency (RF) and microwave circuits is presented. This postfabrication integration scheme is compatible with complementary metal-oxide-semiconductor (CMOS) technology and utilizes room temperature deposited Parylene-N as low loss and low permittivity dielectric material. Interconnect lines, inductors, and transmission lines fabricated on top of arrays of prefabricated 0.13 mu m and 90 nm CMOS transistors coated with Parylene-N are configured to design interconnect programmable RF and microwave circuits. The technology is used to demonstrate three proof of concept interconnect programmable narrowband amplifiers. These amplifiers have center frequencies of 5.5, 6.4, and 18 GHz with forward gain S-21 of 16.6, 11, and 18.7 dB, respectively. Fabrication simplicity and programmable nature of this technology compared to standard application specific integrated circuit (ASIC) fabrication lowers the cost and time to market of individual ASIC chip.


Engineering | Nanoscience and Nanotechnology