Strain relaxation in Si/Ge/Si nanoscale bars from molecular dynamics simulations

Yumi Park, Purdue University - Main Campus
Hasan Metin Atkulga, Purdue University - Main Campus
Ananth Y. Grama, Purdue University
Alejandro Strachan, Purdue University - Main Campus

Date of this Version



DOI: 10.1063/1.3168424

This document has been peer-reviewed.



We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD results, which are in excellent agreement with experiments, we derive a simple model to predict lateral strain as a function of geometry for this class of nanobars.


Engineering | Nanoscience and Nanotechnology