Quantum Approach to Electronic Noise Calculations in the Presence of Electron-Phonon Interactions
Date of this Version
2010Acknowledgements
This work was partially supported by NSF under Grant No. EEC-0228390 that funds the Network for Computational Nanotechnology, by NSF PetaApps under Grant No. 0749140, by the Nanoelectronics Research Initiative !NRI" through the Midwest Institute for Nanoelectronics Discovery, by the Materials Structures and Devices Focus Center !MSD" funded by Focus Center Research Program !FCRP", by the National Research Foundation of Korea Grant funded by the Korean Government !Grant No. NRF-2009-352-D00114", and by Purdue University nanoHUB.org computational resources such as the “workspace application” have been used in this work.
Abstract
A quantum-mechanical approach to the calculation of electronic noise for nanoscale devices is presented. This method is based on the nonequilibrium Green’s-function formalism with electron-phonon scattering mechanisms and takes the effects of the Pauli exclusion principle and the long-range Coulomb interactions into account. As examples the drain current noise characteristics of silicon nanowire transistors at room temperature are simulated. The drain current noise in the saturation regime is primarily shot-noise dominant but is suppressed for higher gate biases due to the electron-electron correlation in the channel region. The role of electron-phonon interactions on noise, the transition from thermal to shot noise, and the physical origin of the shot-noise phenomenon are also investigated.
Keywords
Discipline(s)
Nanoscience and Nanotechnology
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Physical Review B 82, 125328 (2010); 125328-1