Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors

Rajib Rahman, Purdue University - Main Campus
Seung H. Park, Purdue University - Main Campus
Timothy B. Boykin, University of Alabama - Huntsville
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University
Sven Rogge, Delft Univ Technol
Lloyd CL Hollenberg, University of Melbourne

Date of this Version



DOI: 10.1103/PhysRevB.80.155301

This document has been peer-reviewed.



The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework, the spin-orbit Stark parameters are computed for donors in multivalley semiconductors, silicon, and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate-induced transition from three-dimensional to two-dimensional wave-function confinement show that the corresponding g-factor shift in Si is experimentally observable, and at modest B field, O(1 T) can exceed the Stark shift of the hyperfine interaction.


Nanoscience and Nanotechnology