Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

T Shen, Purdue University - Main Campus
J J. Gu, Purdue University - Main Campus
Y Q. Wu, Purdue University - Main Campus
M L. Bolen, Purdue University - Main Campus
Michael A. Capano, Birck Nanotechnology Center, Purdue University
L W. Engel, Natl High Magnet Field Lab
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University

Date of this Version



DOI: 10.1063/1.3254329 

This document has been peer-reviewed.



Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).


Nanoscience and Nanotechnology