Design Guidelines for True Green LEDs and High efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

Samarth Agarwal, Purdue University - Main Campus
Kyle H. Montgomery, Purdue University - Main Campus
Timothy B. Boykin, University of Alabama - Huntsville
Gerhard Klimeck, Purdue University - Main Campus
Jerry M. Woodall, Purdue University - Main Campus

Date of this Version



The authors acknowledge the use of nanoHUB computational resources for this work.


accepted for publication in Electrochemical and Solid-State Letters (2009).


In the fields of solid state lighting and high efficiency solar photovoltaics (PV), a need still exists for a material system that can target the 2.3-2.5eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design alternative to the disordered alloy systems. The effective band-gap of the ZnSe/GaAs(001) superlattice has been studied, as a function of the constituent monolayers using tight binding. The possibility of engineering a range of band-gaps with the same material system, to achieve the optimum value for solar PV and LED applications, has been proposed.


True Green LEDs, High Efficiency Photovoltaics, ZnSe/GaAs Digital Alloys


Nanoscience and Nanotechnology