Design Guidelines for True Green LEDs and High efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys
Date of this Version2009
The authors acknowledge the use of nanoHUB computational resources for this work.
In the fields of solid state lighting and high efficiency solar photovoltaics (PV), a need still exists for a material system that can target the 2.3-2.5eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design alternative to the disordered alloy systems. The effective band-gap of the ZnSe/GaAs(001) superlattice has been studied, as a function of the constituent monolayers using tight binding. The possibility of engineering a range of band-gaps with the same material system, to achieve the optimum value for solar PV and LED applications, has been proposed.
True Green LEDs, High Efficiency Photovoltaics, ZnSe/GaAs Digital Alloys
Nanoscience and Nanotechnology